Erratum: SRIM simulation of irradiation damage by protons in InAs/GaSb type-II superlattices

Luminescence dynamics in type-II GaAs/AlAs superlattices near the type-I to type-II crossover.

Kinetics of exciton photoluminescence in type - II semiconductor superlattices

The exciton decay rate at a rough interface in type-II semiconductor super-lattices is investigated. It is shown that the possibility of recombination of indirect excitons at a plane interface essentially affects kinetics of the exci-ton photoluminescence at a rough interface. This happens because of strong correlation between the exciton recombination at the plane interface and at the roughnes...

Terahertz band-gap in InAs/GaSb type-II superlattices

We demonstrate theoretically that it is possible to realize terahertz (THz) fundamental band-gap between the electron mini-band in the InAs layer and the heavy-hole mini-band in the GaSb layer in InAs/GaSb based type II superlattices (SLs). The THz band-gap can be tuned by varying the sample growth parameters such as the well widths of the InAs and/or GaSb layers. The presence of such band-gap ...

Photoluminescence studies of type-II CdSe/CdTe superlattices

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‏‎suppression of coke formation in thermal cracking by coke inhibitors‎‏

‏‎the main purpose of this research was to:1.develop a coking model for thermal cracking of naphtha.2.study coke inhibition methods using different coke inhibitors.developing a coking model in naphtha cracking reactors requires a suitable model of the thermal cracking reactor based on a reliable kinetic model.to obtain reliable results all these models shall be solved simultaneously.for this pu...